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US Patent 12108609 Memory bit-cell with stacked and folded planar capacitors

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Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
121086090
Patent Inventor Names
Debo Olaosebikan0
Noriyuki Sato0
Rajeev Kumar Dokania0
Tanay Gosavi0
Amrita Mathuriya0
Sasikanth Manipatruni0
Date of Patent
October 1, 2024
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Patent Application Number
176538110
Date Filed
March 7, 2022
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Patent Citations
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US Patent 7029925 FeRAM capacitor stack etch
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US Patent 9818468 Charge storage ferroelectric memory hybrid and erase scheme
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US Patent 9830969 Multilevel ferroelectric memory cell for an integrated circuit
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US Patent 10043567 Multilevel ferroelectric memory cell for an integrated circuit
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US Patent 10354712 Ferroelectric memory cells
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US Patent 10600808 Ferroelectric memory cell for an integrated circuit
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US Patent 10847201 High-density low voltage non-volatile differential memory bit-cell with shared plate line
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US Patent 10872905 Integrated circuit including a ferroelectric memory cell and manufacturing method thereof
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...
Patent Primary Examiner
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Han Yang
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CPC Code
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G11C 11/221
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G11C 11/223
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Patent abstract

A configuration for efficiently placing a group of capacitors with one terminal connected to a common node is described. The capacitors are stacked and folded along the common node. In a stack and fold configuration, devices are stacked vertically (directly or with a horizontal offset) with one terminal of the devices being shared to a common node, and further the capacitors are placed along both sides of the common node. The common node is a point of fold. In one example, the devices are capacitors. N number of capacitors can be divided in L number of stack layers such that there are N/L capacitors in each stacked layer. The N/L capacitors are shorted together with an electrode (e.g., bottom electrode). The electrode can be metal, a conducting oxide, or a combination of a conducting oxide and a barrier material. The capacitors can be planar, non-planar or replaced by memory elements.

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