US Patent 12108691 Manufacturing method of memory device
Patent 12108691 was granted and assigned to United Microelectronics Corporation on October, 2024 by the United States Patent and Trademark Office.
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US Patent 12108691 Manufacturing method of memory device
Article
Patent abstract
A memory device and a manufacturing method thereof are provided. The memory device includes a device substrate, a resistance variable layer and a top electrode. The bottom electrode is disposed on the device substrate. The resistance variable layer is disposed on the bottom electrode. The top electrode is disposed on the resistance variable layer. The bottom electrode is formed with a tensile stress, while the top electrode is formed with a compressive stress.
Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Bin-Siang Tsai0
Chich-Neng Chang0
Da-Jun Lin0
Fu-Yu Tsai0
Shih-Wei Su0
Date of Patent
October 1, 2024
0Patent Application Number
183241730
Date Filed
May 26, 2023
0Patent Citations
Patent Primary Examiner
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