Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tatsuya E. Sato0
Wei Liu0
Li-Qun Xia0
Date of Patent
October 8, 2024
0Patent Application Number
166319790
Date Filed
August 1, 2018
0Patent Citations
Patent Primary Examiner
Patent abstract
Methods comprising forming a metal oxide film by atomic layer deposition using water as an oxidant are described. The metal oxide film is exposed to a decoupled plasma comprising one or more of He, H2 or O2 to lower the wetch etch rate of the metal oxide film.
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