US Patent 12112984 Contact features of semiconductor devices
Patent 12112984 was granted and assigned to Taiwan Semiconductor Manufacturing Company on October, 2024 by the United States Patent and Trademark Office.
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US Patent 12112984 Contact features of semiconductor devices
Article
Patent abstract
A semiconductor device includes a conductive feature, a dielectric layer disposed over the conductive feature, and a contact feature extending through the dielectric layer. The contact feature has an upper portion and a lower portion. The upper portion is spaced apart from the dielectric layer with a spacer layer. The lower portion is electrically coupled to the conductive feature and in contact with the dielectric layer.
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chien-Hung Chen0
Tsui-Ling Yen0
Date of Patent
October 8, 2024
0Patent Application Number
171926000
Date Filed
March 4, 2021
0Patent Primary Examiner
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