US Patent 12113042 Metal bonding structure and manufacturing method thereof
Patent 12113042 was granted and assigned to Taiwan Semiconductor Manufacturing Company on October, 2024 by the United States Patent and Trademark Office.
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US Patent 12113042 Metal bonding structure and manufacturing method thereof
Article
Patent abstract
Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.
Infobox
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chun-Hao Chou0
Chun-Liang Lu0
Kuo-Cheng Lee0
Wei-Lin Chen0
Date of Patent
October 8, 2024
0Patent Application Number
174501040
Date Filed
October 6, 2021
0Patent Citations
Patent Primary Examiner
CPC Code
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