Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ching-Feng Fu0
Yu-Lien Huang0
Guan-Ren Wang0
Date of Patent
October 15, 2024
0Patent Application Number
178746940
Date Filed
July 27, 2022
0Patent Citations
0
...
Patent Primary Examiner
Patent abstract
In an embodiment, a structure includes: a contact etch stop layer (CESL) over a substrate; a fin extending through the CESL; an epitaxial source/drain region in the fin, the epitaxial source/drain region extending through the CESL; a silicide contacting upper facets of the epitaxial source/drain region; a source/drain contact contacting the silicide, lower facets of the epitaxial source/drain region, and a first surface of the CESL; and an inter-layer dielectric (ILD) layer surrounding the source/drain contact, the ILD layer contacting the first surface of the CESL.
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