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US Patent 12136551 Method for forming FinFET super well

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
September 30, 2021
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Date of Patent
November 5, 2024
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Patent Application Number
17491090
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Patent Citations
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US Patent 10763259 Semiconductor device manufacturing method
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US Patent 9634087 FinFET and fabrication method thereof
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US Patent 8575708 Structure of field effect transistor with fin structure
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Patent Inventor Names
Yong Li
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12136551
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Patent Primary Examiner
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Mary A Wilczewski
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CPC Code
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H01L 27/0886
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H01L 27/0924
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H01L 29/66795
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H01L 29/785
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H01L 21/2253
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H01L 21/3086
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H01L 21/26513
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H01L 21/823821
0
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H01L 21/823431
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