Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kazuki Tanemura0
Shunpei Yamazaki0
Tetsuya Kakehata0
Yuichi Sato0
Takashi Hirose0
Atsushi Shibazaki0
Date of Patent
November 5, 2024
0Patent Application Number
174371430
Date Filed
March 30, 2020
0Patent Citations
...
Patent Primary Examiner
CPC Code
Patent abstract
A semiconductor device with little variation in transistor characteristics is provided. First to third oxide films, a first conductive film, a first insulating film, and a second conductive film are sequentially formed. Shaping them into island-like shapes. An insulator is formed over the island-like shapes and an opening is formed in the insulator and a part of the island-like shapes. Another oxide film, a gate insulating film, and a gate electrode are formed in the opening in this order to form the transistor.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.