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US Patent 6875671 Method of fabricating vertical integrated circuits

Patent 6875671 was granted and assigned to REVEO, INC. on April, 2005 by the United States Patent and Trademark Office.

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Is a
Patent
Patent
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Patent attributes

Patent Applicant
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Current Assignee
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REVEO, INC.
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
68756710
Patent Inventor Names
Sadeg M. Faris0
Date of Patent
April 5, 2005
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Patent Application Number
107172190
Date Filed
November 19, 2003
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Patent Citations Received
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US Patent 12136562 3D semiconductor device and structure with single-crystal layers
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US Patent 12094965 3D semiconductor device and structure with metal layers and memory cells
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US Patent 12094892 3D micro display device and structure
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US Patent 12120880 3D semiconductor device and structure with logic and memory
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US Patent 12125737 3D semiconductor device and structure with metal layers and memory cells
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US Patent 11804396 Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
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US Patent 11854857 Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
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US Patent 11855100 Multilevel semiconductor device and structure with oxide bonding
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...
Patent Primary Examiner
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T. N. Quach
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Patent abstract

A method for fabricating a vertical integrated circuit is disclosed. Integrated circuits are fabricated on a substrate with layers of predetermined weak and strong bond regions where deconstructed layers of integrated circuits are fabricated at or on the weak bond regions. The layers are then peeled and subsequently bonded to produce a vertical integrated circuit. An arbitrary number of layers can be bonded and stacked in to a separate vertical integrated circuit. Also disclosed are methods of creating edge interconnects and vias through the substrate to form interconnections between layers and devices thereon.

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