US Patent 6906391 Semiconductor device having silicon oxide film
Patent 6906391 was granted and assigned to Sanyo on June, 2005 by the United States Patent and Trademark Office.
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Patent abstract
A semiconductor device whose working life can be improved is obtained. This semiconductor device comprises a first conductive layer, a second conductive layer and a silicon oxide film, formed between the first and second conductive layers, containing chlorine introduced therein. Thus, the silicon oxide film is inhibited from formation of electron traps while a large number of holes are formed in an initial stage of electron injection into the silicon oxide film.
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Patent Inventor Names
Shoji Sudo0
Date of Patent
June 14, 2005
0Patent Application Number
104535660
Date Filed
June 4, 2003
0Patent Primary Examiner
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US Patent 6906391 Semiconductor device having silicon oxide film
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