US Patent 6958207 Method for producing large area antireflective microtextured surfaces

A method employing a photolithography mask for producing microtextured antireflective surfaces is disclosed. The photolithography mask is used during the exposure of photoresist to a pattern of ultraviolet light. The exposed photoresist is subsequently processed to obtain a microtextured surface possessing antireflective properties. The antireflective surface profile comprises an array of sub-micron protuberances that may reside in a periodic arrangement, a quasiperiodic arrangement, or in an arbitrary non-periodic arrangement. The antireflective surface is designed for visible light. It may be scaled-up to large areas, and is suitable for replication into inexpensive polymer materials.