Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ernst H. A. Granneman0
Pascal G. Vermont0
Vladimir I. Kuznetsov0
Xavier Pagès0
Date of Patent
April 4, 2006
0Patent Application Number
107002980
Date Filed
October 31, 2003
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.
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