Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jick Yu0
Hua Chung0
Mei Chang0
Nirmalya Maity0
Roderick Craig Mosely0
Date of Patent
May 23, 2006
0Patent Application Number
108650420
Date Filed
June 10, 2004
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.