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US Patent 7059267 Use of pulsed grounding source in a plasma reactor

Patent 7059267 was granted and assigned to Micron Technology on June, 2006 by the United States Patent and Trademark Office.

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Patent attributes

Current Assignee

Micron Technology

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Chuck E. Hedberg0

Kevin G. Donohoe0

Date of Patent

June 13, 2006

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Patent Application Number

102198410

Date Filed

August 14, 2002

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Patent Citations Received

US Patent 12125673 Pulsed voltage source for plasma processing applications

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US Patent 12106938 Distortion current mitigation in a radio frequency plasma processing chamber

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US Patent 12111341 In-situ electric field detection method and apparatus

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US Patent 12125674 Surface charge and power feedback and control using a switch mode bias system

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US Patent 11842884 Spatial monitoring and control of plasma processing environments

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US Patent 11887813 Pulsed voltage source for plasma processing

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Patent Primary Examiner

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Patent abstract

A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.

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