Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 8, 2006
Patent Application Number
10125216
Date Filed
April 18, 2002
Patent Primary Examiner
Patent abstract
A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.
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