Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shinichi Nagahama0
Tomoya Yanamoto0
Date of Patent
August 22, 2006
Patent Application Number
10473159
Date Filed
March 28, 2002
Patent Primary Examiner
Patent abstract
In a nitride semiconductor device having an active layer 12 between a first electrically conductive type of layer and a second electrically conductive type of layer, a quantum well structure is adopted in which an active layer 12 has at least a well layer 11 formed of a nitride semiconductor containing In and Al and a barrier layer 2 formed of a nitride semiconductor containing Al, whereby a laser device excellent in emitting efficacy at a short wavelength region is obtained. It is particularly preferable that said well layer 1 is formed of AlxInyGa1−x−yN (0<x≦1<0<y≦1, x+y<1) and said barrier layer 2 is formed of AluInvGa1−u−vN (0<u≦1, 0≦v≦1, u+v<1).
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