Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takamitsu Kawahara0
Hiroyuki Nagasawa0
Kuniaki Yagi0
Date of Patent
September 5, 2006
Patent Application Number
10227336
Date Filed
August 26, 2002
Patent Primary Examiner
Patent abstract
Provided is a method of manufacturing compound single crystals by epitaxially growing a compound single crystal layer differing from the substrate in which the planar defects generated in the crystal that is epitaxially grown are reduced. The method of manufacturing compound single crystals in which a compound single crystalline layer differing from a compound single crystalline substrate is epitaxially grown on the surface of said substrate. Plural undulations extending in a single direction are present on at least a portion of the surface of said substrate, and in that said undulations are provided in such a manner that as said compound single crystalline layer grows, the defects that grow meet each other.
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