Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Richard Q. Williams0
Edward J. Nowak0
Date of Patent
September 5, 2006
Patent Application Number
10907971
Date Filed
April 22, 2005
Patent Primary Examiner
Patent abstract
A method of forming a dual gate fin-type field effect transistor (FinFET) structure patterns silicon fins over an insulator and patterns a gate conductor at an angle to the fins. The gate conductor is formed laterally adjacent to and over center portions of the fins. The gate conductor is planarized such that the gate conductor is separated into distinct gate conductor portions that are separated by the fins. These gate conductor portions include front gates and back gates. The front gates and the back gates alternate along the structure, such that each fin has a front gate on one side and a back gate on the opposite side. Then front gate wiring is formed to the front gates and back gate wiring is formed to the back gates.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
