Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tadaharu Minato0
Tetsuya Nitta0
Date of Patent
September 12, 2006
Patent Application Number
10961236
Date Filed
October 12, 2004
Patent Primary Examiner
Patent abstract
A semiconductor device of the present invention has a pn-repeating structure that a structure in which a p-type impurity region (4) and an n-type drift region (3) are aligned side by side is repeated twice or more, and a low concentration region which is either p-type impurity region (4) or n-type drift region (3) located at the outermost portion of this pn-repeating structure has the lowest impurity concentration or has the least generally effective charge amount among all the p-type impurity regions (4) and n-type drift regions (3) forming the pn-repeating structure.
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