Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Masahiro Kiyotoshi0
Katsuhiko Hieda0
Date of Patent
September 12, 2006
0Patent Application Number
108041590
Date Filed
March 19, 2004
0Patent Primary Examiner
Patent abstract
According to the present invention, there is a provided a semiconductor device fabrication method having, forming a mask material in a surface portion of a semiconductor substrate, and forming a step having a projection by using the mask material; forming a dielectric film on the semiconductor substrate so as to fill the step and planarize an entire surface; annealing the dielectric film; etching back the dielectric film such that a surface of the dielectric film is positioned between upper and lower surfaces of the mask material; and removing the mask material to expose a surface of the projection of the semiconductor substrate.
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