Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroyuki Shimada0
Date of Patent
September 12, 2006
0Patent Application Number
108010880
Date Filed
March 15, 2004
0Patent Primary Examiner
Patent abstract
A minute semiconductor device having a high driving ability and a manufacturing method thereof are provided. A semiconductor device includes a support substrate, an insulating layer that is formed above the support substrate, a semiconductor layer that is formed above the insulating layer, a channel region that is provided in the semiconductor layer, a source region and a drain region that are formed so as to sandwich the channel region, and a gate electrode that is formed above the channel region via a gate insulating layer. The boundary between the gate insulating layer and the channel region has a wave-like pattern of a gradual slope without any corners.
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