Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 12, 2006
Patent Application Number
10453045
Date Filed
June 3, 2003
Patent Primary Examiner
Patent abstract
A buffer layer, an undoped gallium nitride layer, and an n-type gallium nitride active layer are formed on a sapphire substrate. Ohmic contacts and a Schottky contact are then formed on the n-type gallium nitride active layer as a source contact, a drain contact and a gate contact, respectively. The Schottky contact is a copper alloy, such as palladium copper, in which the content by weight of copper is 5%.
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