Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shiao-Shien Chen0
Date of Patent
September 12, 2006
0Patent Application Number
107111410
Date Filed
August 27, 2004
0Patent Primary Examiner
Patent abstract
An electrostatic discharge (ESD) protection circuit formed on a P-type substrate has a first p+ diffusion region in the P-type substrate, a N-well in the P-type substrate, a first n+ diffusion region in the N-well, a P-well in the N-well, and an n-p-n bipolar junction transistor (BJT) in the P-well. An equivalent circuit between a base and an emitter of the BJT is a diode without connecting to any resistor in parallel.
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