US Patent 7109516 Strained-semiconductor-on-insulator finFET device structures
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Patent abstract
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
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US Patent 07109516 Strained-semiconductor-on-insulator finFET device structures US Patent 7109516 Strained-semiconductor-on-insulator finFET device structures
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Patent Number
0710951600
Patent Number
710951600
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Patent Jurisdiction
Patent Number
071095160
Date of Patent
September 19, 2006
0Patent Application Number
112119330
Date Filed
August 25, 2005
0Official Website
Patent Primary Examiner
Edits on 25 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
071095160
Date of Patent
September 19, 2006
0Patent Application Number
112119330
Date Filed
August 25, 2005
0Official Website
Patent Primary Examiner
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US Patent 07109516 Strained-semiconductor-on-insulator finFET device structures
Infobox
Is a
Patent jurisdiction
Patent number
07109516
Date of patent
September 19, 2006
Patent application number
11211933
Date Filed
August 25, 2005
Patent primary examiner
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