Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Satoshi Inaba0
Makoto Fujiwara0
Date of Patent
September 26, 2006
Patent Application Number
10799780
Date Filed
March 15, 2004
Patent Primary Examiner
Patent abstract
An aspect of the present invention provides a semiconductor device that includes a first transistor including a source region, a drain region provided in the same device region as the source region, and a loop-shaped gate electrode region, and a second transistor sharing, with the first transistor, the loop-shaped gate electrode region and the source region or the drain region.
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