US Patent 7112987 Semiconductor sensor with a field-effect transistor
Patent 7112987 was granted and assigned to Micronas on September, 2006 by the United States Patent and Trademark Office.
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Patent abstract
The semiconductor sensor has at least one field-effect transistor (31; 31, 32) which is coupled to a sensitive electrode and which has measuring phases that are interruptible by idle phases through a control device (50). During the idle phases, the field-effect transistor or transistors (30; 31, 32) together with their terminals is or are connected to the same potential, preferably the ground potential.
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US Patent 07112987 Semiconductor sensor with a field-effect transistor US Patent 7112987 Semiconductor sensor with a field-effect transistor
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Patent Number
0711298700
Patent Number
711298700
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Official Website
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071129870
Date of Patent
September 26, 2006
0Patent Application Number
108628330
Date Filed
June 7, 2004
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071129870
Date of Patent
September 26, 2006
0Patent Application Number
108628330
Date Filed
June 7, 2004
0Official Website
Patent Primary Examiner
Edits on 7 Jun, 2022
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US Patent 07112987 Semiconductor sensor with a field-effect transistor
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07112987
Date of patent
September 26, 2006
Patent application number
10862833
Date Filed
June 7, 2004
Patent primary examiner
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