Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 26, 2006
Patent Application Number
11045535
Date Filed
January 28, 2005
Patent Primary Examiner
Patent abstract
A negative differential resistance (NDR) field-effect transistor element is disclosed, formed on a silicon-based substrate using conventional MOS manufacturing operations. Methods for improving a variety of NDR characteristics for an NDR element, such as peak-to-valley ratio (PVR), NDR onset voltage (VNDR) and related parameters are also disclosed.
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