US Patent 7113531 Asymmetric waveguide GaInAs laser diode
Patent 7113531 was granted and assigned to Samsung on September, 2006 by the United States Patent and Trademark Office.
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Patent Inventor Names
Dae-sung Song0
Tak Kim0
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Patent abstract
A laser diode is provided. The laser diode has a structure in which reflective index of an n-cladding layer formed on a first face of the active layer is higher than that of a p-cladding layer formed on a second face. This asymmetric waveguide structure suppresses extension of field into the p-cladding layer thus reducing free carrier absorption in the p-cladding layer.
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US Patent 07113531 Asymmetric waveguide GaInAs laser diode US Patent 7113531 Asymmetric waveguide GaInAs laser diode
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Patent Number
071135310
Patent Number
71135310
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
071135310
Date of Patent
September 26, 2006
0Patent Application Number
107940280
Date Filed
March 8, 2004
0Official Website
Patent Primary Examiner
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US Patent 07113531 Asymmetric waveguide GaInAs laser diode
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07113531
Date of patent
September 26, 2006
Patent application number
10794028
Date Filed
March 8, 2004
Patent primary examiner
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