Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wen H. Zhu0
Li-Qun Xia0
Sohyun Park0
Tzu-Fang Huang0
Hichem M'Saad0
Date of Patent
October 3, 2006
Patent Application Number
10816606
Date Filed
April 2, 2004
Patent Primary Examiner
Patent abstract
A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.
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