US Patent 7115927 Phase changeable memory devices
Patent 7115927 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on October, 2006 by the United States Patent and Trademark Office.
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Patent Inventor Names
Horii Hideki0
Jeong-hee Park0
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Patent abstract
Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that includes nitrogen atoms. First and second electrodes are electrically connected to the phase-changeable material pattern and provide an electrical signal thereto. The phase-changeable material pattern may have a polycrystalline structure.
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US Patent 07115927 Phase changeable memory devices US Patent 7115927 Phase changeable memory devices
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Patent Number
071159270
Patent Number
71159270
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Current Assignee
0
Patent Jurisdiction
Patent Number
071159270
Date of Patent
October 3, 2006
0Patent Application Number
107815970
Date Filed
February 18, 2004
0Official Website
Patent Primary Examiner
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US Patent 07115927 Phase changeable memory devices
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07115927
Date of patent
October 3, 2006
Patent application number
10781597
Date Filed
February 18, 2004
Patent primary examiner
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