Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 10, 2006
Patent Application Number
10413394
Date Filed
April 15, 2003
Patent Citations Received
Patent Primary Examiner
Patent abstract
The present invention realizes a heterobipolar transistor using a SiGeC base layer in order to improve its electric characteristics. Specifically, the distribution of carbon and boron within the base layer is controlled so that the concentration of boron is higher than the concentration of carbon on the side bordering on the emitter layer, and upon the formation of the emitter layer, both boron and carbon are dispersed into a portion of the emitter layer that comes into contact with the base layer.
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