Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ichiro Yamamoto0
Date of Patent
October 24, 2006
0Patent Application Number
111209940
Date Filed
May 4, 2005
0Patent Primary Examiner
Patent abstract
A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY (0.05≦X≦0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.
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