US Patent 7125813 Method of depositing low K barrier layers
Patent 7125813 was granted and assigned to Applied Materials on October, 2006 by the United States Patent and Trademark Office.
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Patent abstract
A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.
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US Patent 07125813 Method of depositing low K barrier layers US Patent 7125813 Method of depositing low K barrier layers
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Patent Number
0712581300
Patent Number
712581300
Edits on 28 Mar, 2023
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071258130
Date of Patent
October 24, 2006
0Patent Application Number
108284410
Date Filed
April 20, 2004
0Official Website
Patent Primary Examiner
Edits on 25 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071258130
Date of Patent
October 24, 2006
0Patent Application Number
108284410
Date Filed
April 20, 2004
0Official Website
Patent Primary Examiner
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US Patent 07125813 Method of depositing low K barrier layers
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07125813
Date of patent
October 24, 2006
Patent application number
10828441
Date Filed
April 20, 2004
Patent primary examiner
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