Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 31, 2006
Patent Application Number
10708861
Date Filed
March 29, 2004
Patent Primary Examiner
Patent abstract
A method of forming a trench in a semiconductor substrate includes a step of converting the cross section of the upper portion of the trench from octagonal to rectangular, so that sensitivity to alignment errors between the trench lithography and the active area lithography is reduced. Applications include a vertical transistor that becomes insensitive to misalignment between the trench and the litho for the active area, in particular a DRAM cell with a vertical transistor.
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