Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 14, 2006
Patent Application Number
10784947
Date Filed
February 25, 2004
Patent Primary Examiner
Patent abstract
A method of manufacturing a semiconductor device including a gallium nitride related semiconductor. The method include preparing a substrate having surface of a gallium nitride related semiconductor; contacting the surface with atomic nitrogen, which is obtained by decomposing a nitrogen-containing gas in a catalytic reaction, to nitride the surface; and forming, on the surface, a gate electrode and source and drain electrodes opposing each other across the gate electrode.
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