Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yi-Feng Yang0
Che-Yi Su0
Wen-Hsi Lee0
Date of Patent
November 21, 2006
0Patent Application Number
110409480
Date Filed
January 21, 2005
0Patent Primary Examiner
Patent abstract
The present invention relates to a novel ZnTiO3-based dielectric material, having the composition represented by the formula (Zn1-aMga)(Ti1-b-cMnbDc)dO3, wherein D is an element having a valence of 5 or above, 0≦a≦0.5, c≦b≦0.1, 0<c≦0.1, 1≦d≦1.5, which has properties of ultra low sintering temperature, high reliability, and high dielectric strength, and is capable of being applied to produce low capacitance multilayer ceramic capacitor with high quality factor, low ESR, and high insulation resistance. The present invention also relates to a method of preparing such a novel ZnTiO3-based dielectric material.
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