US Patent 7141505 Method for bilayer resist plasma etch
Patent 7141505 was granted and assigned to Lam Research on November, 2006 by the United States Patent and Trademark Office.
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Patent abstract
A method for etching a bilayer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the bilayer resist into the etch chamber. Then SiCl4 gas flows into the etch chamber. Next, a plasma is struck in the etch chamber while flowing the SiCl4 gas. Then the bilayer resist is etched.
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US Patent 07141505 Method for bilayer resist plasma etch US Patent 7141505 Method for bilayer resist plasma etch
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Patent Number
0714150500
Patent Number
714150500
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071415050
Date of Patent
November 28, 2006
0Patent Application Number
108828420
Date Filed
June 30, 2004
0Official Website
Patent Primary Examiner
Edits on 24 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071415050
Date of Patent
November 28, 2006
0Patent Application Number
108828420
Date Filed
June 30, 2004
0Official Website
Patent Primary Examiner
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US Patent 07141505 Method for bilayer resist plasma etch
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07141505
Date of patent
November 28, 2006
Patent application number
10882842
Date Filed
June 30, 2004
Patent primary examiner
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