Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 28, 2006
Patent Application Number
10066542
Date Filed
February 5, 2002
Patent Primary Examiner
Patent abstract
The TFT electric characteristic is ready to be influenced by the channel region in the neighborhood of an interface between a semiconductor and a gate insulating film. The present invention provides TFTs reduced in electric characteristic deviations and a method for manufacturing the same. The invention forms a region or layer containing an inactive element, or rear gas element, in the channel region. As shown in FIG. 1, a rear gas element is contained at least in an upper layer of the channel region.
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