US Patent 7141861 Semiconductor device and manufacturing method there
Patent 7141861 was granted and assigned to Sanyo on November, 2006 by the United States Patent and Trademark Office.
All edits
A problem in related art according to which an increase in leak current cannot be avoided in order to obtain a low forward voltage VF as forward voltage VF and reverse leak current IR characteristics of a Schottky barrier diode are in a trade-off relationship is hereby solved by forming a Schottky barrier diode using a metal layer comprising a Schottky metal layer of Ti including a small amount of Al. Consequently, a low reverse leak current IR can be obtained without causing a large increase in the forward voltage VF of pure Ti such that power consumption can be reduced by suppressing forward power loss and decreasing reverse power loss.
US Patent 07141861 Semiconductor device and manufacturing method there US Patent 7141861 Semiconductor device and manufacturing method there
US Patent 07141861 Semiconductor device and manufacturing method there
Find more entities like US Patent 7141861 Semiconductor device and manufacturing method there
