Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shigeharu Monoe0
Tomohiko Sato0
Shinya Sasagawa0
Date of Patent
December 5, 2006
0Patent Application Number
109543400
Date Filed
October 1, 2004
0Patent Primary Examiner
Patent abstract
It is an object of the present invention to provide a method for manufacturing a highly reliable semiconductor device with preferable yield. In the invention, two-step etching is performed when selectively removing an interlayer insulating film with at least two layers constituting a semiconductor device, and forming an opening. One feature of the invention is that at least either one of a first gas (a first etching gas) and a second gas (a second etching gas) used at the time of the two-step etching is added with an inert gas.
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