US Patent 7144825 Multi-layer dielectric containing diffusion barrier material

Patent 7144825 was granted and assigned to Freescale Semiconductor on December, 2006 by the United States Patent and Trademark Office.

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Patent

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Current Assignee

Freescale Semiconductor

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7144825

Date of Patent

December 5, 2006

Patent Application Number

10687271

Date Filed

October 16, 2003

Patent Primary Examiner

‌

Laura M. Schillinger

Patent abstract

A method for forming a dielectric is disclosed. The method comprises forming a first dielectric layer over semiconductor material. A diffusion barrier material is introduced into the first dielectric layer. Lastly, a second dielectric layer is formed over the first dielectric layer after the introducing.

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