Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
December 5, 2006
Patent Application Number
11056260
Date Filed
February 14, 2005
Patent Primary Examiner
Patent abstract
A nitride semiconductor element exhibiting low leakage current and high ESD tolerance includes an active layer of nitride semiconductor that is interposed between a p-sided layer and an n-sided layer, which respectively consist of a plurality of nitride semiconductor layers, the p-side layer including a p-type contact layer as a layer for forming p-ohmic electrodes, the p-type contact layer being formed by laminating p-type nitride semiconductor layers and n-type nitride semiconductor layers in an alternate manner.
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