Patent attributes
A pattern image comparison method is provided which comprises a first input step of inputting a first pattern image based on design data for a reticle mask or a semiconductor device; a second input step of inputting a second pattern image of the reticle mask or semiconductor device manufactured based on the design data; a calculation step of calculating at least one parameter of parameters including a part or all of area, outer periphery, barycenter, and diagonal line of the first pattern image and the second pattern image; and an output step of outputting a result of comparison of a pattern on the reticle mask or semiconductor device and a pattern of the design data based on the calculated parameters of the first and second pattern images.