Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
December 12, 2006
Patent Application Number
10925503
Date Filed
August 24, 2004
Patent Primary Examiner
Patent abstract
In one embodiment, a method comprises placing a first and a second substrate into a reaction chamber, the first substrate being made of an indium antimonide material and having a first surface and the second substrate being made of a silicon or a silicon dioxide material and having a second surface; exposing the first and second surfaces to an oxygen plasma; forming a bond between the first and the second substrates by placing the first surface in contact with the second surface; and annealing the first and the second substrates to strengthen the bond.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
