Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 12, 2006
Patent Application Number
10916500
Date Filed
August 12, 2004
Patent Primary Examiner
Patent abstract
A semiconductor device includes a semiconductor device comprising a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film between the source/drain regions, and a gate sidewall spacer formed on side surfaces of the gate electrode, wherein the gate sidewall spacer is composed of silicon oxide containing 0.1–30 atomic % of chlorine.
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