Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mammen Thomas0
Date of Patent
December 12, 2006
Patent Application Number
11334790
Date Filed
January 19, 2006
Patent Primary Examiner
Patent abstract
The use of a Nitride layer or a silicon-nodule layer capable of Location-Specific (LS) charge storage, allow easy vertical scaling and implementation of NOR and NAND NVM array and technology. If the charge is stored in the traps in the Nitride storage layer, a Oxide Nitride Oxide is used as the storage element and if charge is stored in potential wells of discrete silicon-nodules, or Carbon Buckyball layers, an Oxide silicon-nodule Oxide storage element, or an Oxide Buckyball Oxide layer is used as the storage element.
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