US Patent 7151425 RF MEMS switch and fabrication method thereof
Patent 7151425 was granted and assigned to LG on December, 2006 by the United States Patent and Trademark Office.
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Patent abstract
Disclosed are an RF MEMS switch and a fabrication method thereof. The RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate is formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.
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US Patent 07151425 RF MEMS switch and fabrication method thereof US Patent 7151425 RF MEMS switch and fabrication method thereof
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Patent Number
0715142500
Patent Number
715142500
Edits on 25 Mar, 2023
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
071514250
Date of Patent
December 19, 2006
0Patent Application Number
110360390
Date Filed
January 18, 2005
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
071514250
Date of Patent
December 19, 2006
0Patent Application Number
110360390
Date Filed
January 18, 2005
0Official Website
Patent Primary Examiner
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US Patent 07151425 RF MEMS switch and fabrication method thereof
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07151425
Date of patent
December 19, 2006
Patent application number
11036039
Date Filed
January 18, 2005
Patent primary examiner
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