US Patent 7154125 Nitride-based semiconductor light-emitting device and manufacturing method thereof
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Patent abstract
The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.
Edits on 31 Jul, 2023
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Patent Jurisdiction
Patent Number
71541250
Date of Patent
December 26, 2006
0Patent Application Number
104224040
Date Filed
April 23, 2003
0Patent Primary Examiner
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US Patent 07154125 Nitride-based semiconductor light-emitting device and manufacturing method thereof US Patent 7154125 Nitride-based semiconductor light-emitting device and manufacturing method thereof
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Patent Number
0715412500
Patent Number
715412500
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Official Website
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Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
071541250
Date of Patent
December 26, 2006
0Patent Application Number
104224040
Date Filed
April 23, 2003
0Official Website
Patent Primary Examiner
Edits on 22 Sep, 2022
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
071541250
Date of Patent
December 26, 2006
0Patent Application Number
104224040
Date Filed
April 23, 2003
0Official Website
Patent Primary Examiner
Edits on 8 Jun, 2022
Golden AI
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US Patent 07154125 Nitride-based semiconductor light-emitting device and manufacturing method thereof
Infobox
Is a
Patent jurisdiction
Patent number
07154125
Date of patent
December 26, 2006
Patent application number
10422404
Date Filed
April 23, 2003
Patent primary examiner
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