Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Han-Tu Lin0
Feng-Yuan Gan0
Date of Patent
January 2, 2007
0Patent Application Number
111429300
Date Filed
June 2, 2005
0Patent Primary Examiner
Patent abstract
Fabrication methods for thin film transistors. A metal gate stack structure is formed on an insulating substrate. The substrate is performed using thermal annealing to create an oxide layer on the sidewalls of the metal gate stack structure. A gate insulating layer is formed on the substrate covering the metal gate stack structure. A semiconductor layer is formed on the gate insulating layer. A source/drain layer is formed on the semiconductor.
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