Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Norihiko Ui0
Kazuo Nambu0
Kazutaka Inoue0
Date of Patent
January 2, 2007
0Patent Application Number
106187170
Date Filed
July 15, 2003
0Patent Primary Examiner
Patent abstract
A field-effect transistor includes a channel layer that is formed on a predetermined semiconductor layer and has an impurity concentration varying from a low value to a high value, and a source region and a drain region each having a bottom face above the predetermined semiconductor layer.
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